Pure `S_(i)` at 300K has equal electron `(n_(e))` and hole `(n_(h))` Concentration of `1.5 xx 10 ^(6) m^(-3)` .Doping by indium increases `n_(h) 4.5 xx 10^(22) m^(-3)`. Calculate the doped silicon.

Explanation

To solve the problem, we need to calculate the electron concentration in doped silicon after doping with indium, which increases the hole concentration.

### Step-by-step Solution:

1. **Identify Given Values:**
- Initial electron concentration, \( n_e = n_h = 1.5 \times 10^{-6} \, \text{m}^{-3} \)
- Doping by indium increases hole concentration, \( n_h = 4.5 \times 10^{22} \, \text{m}^{-3} \)

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