A semiconductor with a band gap of 2.5 e...

A semiconductor with a band gap of 2.5 eV is used to fabricate a p-n photodiode . It can detect a signal of wavelength

4000 nm

6000 Å

6000 nm

4000 Å

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NEW JOYTHI PUBLICATION-SEMICONDUCTOR ELECTRONICS : MATERIALS , DEVICES AND SIMPLE CIRCUITS -COMPETITIVE EXAM CORNER

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