Home
Class 12
PHYSICS
A zener diode has a contact potential of...

A zener diode has a contact potential of 1 V in the absence of biasing. It undergoes Zener breakdown for an electric field of `10^(6)` V/m at the depletion region of p-n junction. If the width of the depletion region is 2.5 `mu`m, what should be the reverse biased potential for the Zener breakdown to occur ?

Promotional Banner

Similar Questions

Explore conceptually related problems

A zener diode has a contract potential of 0.8 V in the absence of biasing. It undergoes zener breakdown for an electric field of 10^(6) Vm^(-1) at the depletion region of p-n junction. If the width of the depletion region is 2-4mu m, what should be the reverse biased potential for the zener breakdown to occur?

The electric field for p-n junction is 1xx10^(6) V/m and depletion region is 5000 Å wide then the potential barrier = …… V.

The knee voltage of a p-n junction diode is 0.8 V and the width of the depletion layer is 2 mum , the electric field in the depletion layer is

A potential barrier of 0.3 V exists across a p-n junction. If the depletion region is 1 mu m wide, what is the intensity of electric field in this region?

A potential barrier of 0.3 V exists across a p-n junction. If the depletion region is 1 mu m wide, what is the intensity of electric field in this region?