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On doping Ge with a little of In or Ga o...

On doping `Ge` with a little of `In or Ga` one gets

A

p-type semiconductor

B

n-type semiconductor

C

insulator

D

rectifier

Text Solution

Verified by Experts

The correct Answer is:
A
p-type of semiconductors are produced
(i) due to metal deficiency defects
(ii) by adding impurity containing less electrons (i.e., atoms of group 13)
Ge belongs to Group 14 and In to Group 13. Hence on doping, p-type semicondutor is obtained.
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DISHA PUBLICATION-THE SOLID STATE-EXERCISE -1 : CONCEPT BUILDER
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  4. a metal crystallizes with a face-centered cubic lattice.The edge of th...

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  5. A metal has an fcc latticed.The edge length of the unit cell is 404 pm...

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  6. If a is the length of the side of a cube, the distance between the bod...

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  7. A given metal crystalline out with a cubic structure having edge leng...

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  8. The vacant space in bcc lattice unit cell is

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  9. Non-stoichiometric compound have the properties of:

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  10. In Bragg's equation for diffraction of X-rays 'n' represents

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  11. Bragg's law is given by the equation:

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  12. Each of the following solids show, the Frenkel defect except

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  13. Schottky defect defines imperfection in the lattice structure of a

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  14. On doping Ge with a little of In or Ga one gets

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  15. When electrons are trapped into the crystalline anion vacancy the def...

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  16. Crystal defect indicated in the diagram below is

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  17. Schottky defect is generally observed in :

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  18. The ratio of inner planar distances of three types of planes (d100,d11...

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  19. The non- stoichiometric compound Fe(0.94)O is formed when x% of Fe^(2+...

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  20. Dopping of AgCl crystals with CdCl(2) results in:

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