For pure ''Ge'' semiconductor quantity of ''e'' and hole is `10^(19) e//m^(3)` if we doped donor impurity in it with density `10^(23) e//m^(3)` then quantity of hole `(e//m^(3))` in semiconductor is :-

A pure semiconductor has equal electron and hole concentration of 10^(16) m^(-3) . Doping by indium increases n_(h) to 5 xx 10^(22) m^(-3) . Then the value of n_(e) in the doped semiconductor is

The number density of electron is 4.5xx10^(22)m^(-3) and number density of holes is 4.5xx10^(9)m^(-3) . This semiconductor is ………..

A semiconductor has equal electron and hole concertration 6xx10^(8) m^(-3) . On doping with a certain impurity electron concertration increase to 8xx10^(12) m^(-3) . Identify the type of semiconductor after doping.

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6 xx 10^(6)//m^(3) . If the donor concentration level is 4.8 xx 10^(20)//m^(3) , then the concentration of holes in the semiconductor is

The number density of electron is 7xx10^(12)m^(-3) and number density of hole is 7xx10^(12)m^(-3) . This semiconductor will be ….. Type.

The number density of free electrons in the semiconductor is 10^(18)m^(-3) . It is doped with a pentavalent impurity atoms of number density 10^(24)m^(-3) , the number density of free electrons m^(-3) increases by a factor of