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In an intrinsic semiconductor the energy...

In an intrinsic semiconductor the energy gap `E_(g) is 1.2 eV`. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at `600K` and `300K`? Assume that temperature dependence intrinstic concentration `n_(i)` is given by
`n_(i)=n_(0) exp ((-E_(g))/(2k_T))`, where `n_(0)` is a constant and `k_=8.62xx10^(-5)eV//K`.

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