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Let n(e) and n(b) are the number den...

Let `n_(e)` and `n_(b)` are the number density of electrons and holes in extrinsic semiconductor then-

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Lets n_p and n_e be the number of holes and conduction electrons in an extrinsic semiconductor.

A pure semiconductor germanium or silicon, free of every impurity is called intrinsic semiconductor. A room temperature, a pure semiconductor has a very small number of current carriers (electrons and holes). Hence, its conductivity is low. When the impurity atoms of valence five or three are doped in a pure semiconductor, we get repectively n-type ot p-type extrinsic semiconductor. In case of a doped semiconductor. n_(e)n_(h)=n_(i)^(2) , where n_(e) and n_(h) are the number density of electrons and holes respectively and n_(i) is the number density of intrinsic charge carriers in a pure semiconductor. The conductivity of extrinsic semiconductor is much higher than that of intrinsic semiconductor. (i) Name two materials to be doped in pure semiconductor of silicon to get p-type semiconductor n-type semiconductor. (ii) What do you learn from the above study?

Lets n_p and n_e be the number of holes and conduction electrons in an intrinsic semiconductor.

Let n_(p) and n_(e) be the number of holes and conduction electrons respectively in a semiconductor. Then,