In a `p-n` junction the depletion region is `400 nm` wide and electric field of `5 xx 10^(5) Vm^(-1)` exists in it. The minimum energy of a conduction electron, which can diffuse from n-side to the p-side is.

In a p-n junction diode, the depletion region is 400 nm wide and an electric field of 5 xx 10^5 V//m exists in it. The minimum kinetic energy of a conduction electron which can diffuse from n side to p side is

The width of the depletion region in a p-n junction diode is 400 nm and an intense electric field of 8 xx 10^5 V/m exists in it. What is the kinetic energy which a conduction electron must have in order to diffuse from then region to p region?

A potential barrier of 0.2 V exists across an unbiased p-n junction (i) Calculate the width of the depletion region if an electric field of 10^(6) Vm^(-1) exists in it (ii) With what minimum kinetic energy a hole should diffuse from the p side to the n side if the junction is (a) unbiased (b) forward biased at 0.1 V (c ) reverse biased at 0.1 V

The width of depletion region in p-n junction diode is 500 nm and an intrinsic electric field of 6xx 10^(5) Vm^(-1) is also found to exist in it. What is the kinetic energy which a conduction electron must have in order to diffuse from the n-side to p-side?

The width of depletion region in p-n junction diode is 500 nm and an intrinsic electric field of 6xx 10^(5) Vm^(-1) is also found to exist in it. What is the kinetic energy which a conduction electron must have in order to diffuse from the n-side to p-side?