A semiconductor has equal electron and hole concentration of `2xx10^(8)m^(-3)`. On doping with a certain impurity, the electron concentration increases to `4xx10^(10)m^(-3),` then the new hole concentration of the semiconductor is

A semiconductor has equal electron and hole concentration of 2 xx 10^(8) m^(-3) . On doping with a certain impurity, the eletron concendration increases to 4 xx 10^(10) m^(-3) , then the new hole concentration of the semiconductor is

a semiconductor has equal electron and hole concetration of 2x10^8 m^(-3) . On doping with a certain impurity, the electron concentration increases to 4x10^(10)m^(-3) , then the new hole concentration of the semiconductor is

A semiconductor has equal electron and hole concentration of 6 xx 10^8m^-3 . On doping with a certain impurity electron concentration increases to 9xx10^12m^-3 Calculate the new hole concentration.

A semiconductor has equal electron and hole concentration of 6xx10^(8) m^(-3) on doping with certain impurity electron concentration increases to 9xx10^(-12) m calculate the new hole concentration

A semiconductor has equal electron and hole concentration of 6xx 10^(4)m^(-3) . On doping with a certain impurity, electron concentration increases to 8 xx 10^(12)m^(-3) . Identify the type of semiconductor.

A semiconductor has equal electron and hole concentration of 6 xx 10^4m^-3 . On doping with a certain impurity electron concentration increases to 8xx10^12m^-3 . Identify the type of semiconductor?

A semiconductor has equal electron and hole concentration of 4.2 xx 10^8 m^(-3) .On doping with a certain impurity,electron concentration increases to 6xx10^(12)m^(-3) . identify the new seiconductor obtained after doping.