Home
Class 12
PHYSICS
A p-n photodiode is fabricated from a se...

A `p-n` photodiode is fabricated from a semiconductor with a band gap of `2.5 eV`. It can detect a signal of wavelength

Promotional Banner

Similar Questions

Explore conceptually related problems

A p-n photodiode is farbricated from a semiconductor with a band gap of 2.5eV. It can detect a signal of wavelength:

A p-n photodiode is fabricate from a semiconductor with a band gap of 2.5eV . It can detect a singal of wavelength

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV . Can it detect a wavelength of 6000nm ?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV can it detect a wavelength of 6000 nm