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Pure silicon at 300 K has same electron ...

Pure silicon at 300 K has same electron and hole concentrations of `1.5xx10^(16)"m" ^(-3)`. Doping by indium the concentration of holes increases to `4.5 xx10^(22)"m" ^(-3)` . Calculate electron concentration in doped silicon.

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Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentration of 1.5xx10^(16) m^(-3) . Doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Calculate n_(e) in the doped silicon.

Pure Si at 300 K has equal electron (n_(e)) and hole (n_(h)) concentrations of 1.5xx10^(16)m^(-3) doping by indium increases n_(h) to 4.5xx10^(22)m^(-3) . Caculate n_(e) in the doped Si-