In an intrinsic semiconductor the energy gap `E_(g) is 1.2 eV`. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at `600K` and `300K`? Assume that temperature dependence intrinstic concentration `n_(i)` is given by
`n_(i)=n_(0) exp ((-E_(g))/(2k_T))`, where `n_(0)` is a constant and `k_=8.62xx10^(-5)eV//K`.

In an intrinsic semiconductor , the energy gap E_(g) is 1.2 eV . Its hole mobility is much smaller than electron mobility and independent of temperature . What is the ratio between conductivity of 600 K and that at 300 K ? Assume that the temperature dependence of intrinsic carrier concentration n_i is given by n_(i)=n_(0) exp ((-E_(g))/(k_T)), where n_(0) is a constant and k_=8.62xx10^(-5)eV//K.

In an intrinsic semiconductor the energy gap E_(g) is 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K ? Assume that the temperature dependence of intrinsic carrier concentration n_(i) is given by n_(i)=n_(0)"exp"(-(E_(g))/(2k_(B)T)) where n_(0) is a constant.

In an intrinsic semiconductor the energy gap E_(g) is 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600 K and that at 300 K? Assume that the temerature dependence of intrinsic carrier concentration n_(i) is given by n_(i)=n_(0)"exp"(-(E_(g))/(2k_(B)T)) where n_(0) is a constant.

In an intrinsic semiconductor the energy gap Eg is 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration n_(i) is given by: n_(i) = n_(o) "exp" (-E_(g)/(2k_(B)T)) Where n_(0) is a constant.

In an intrinsic semiconductor the energy gap E_g is 1.2eV . Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration ni is given by n_i= n_0 exp((E_g)/(2k_BT)) where n_0 is constant.

In an intrinsic semiconductor, the energy gap E_(g) of an intrinsic semiconductor is 1.2 eV. Its hole mobility is very much smaller than electron mobility and is indepndent of temperature. What is the ratio between conductivity at 600K and at 300K? Assume that the temperature dependence of intrinsic concentraction n_(i) is expressed as, n_(i)=n_(o)e^(-E_(g)^(')//k_B)T , where n_(o) is constant and E_(g)^(') is an energy equal to E_(g)//2 , k_(B)=8.62xx10^(-6)eVK^(-1) .