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Suppose a 'n'- type wafer is created by doping Si crystal having `5xx10^(28) "atoms"//m^(3)` with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering `n_(i)=1.5xx10^(16)m^(-3)`, (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

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Suppose a 'n'-type wafer is created by dopin Si crystal having 5xx10^(28) atoms/ m^(3) with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create 'P' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) (i) Calculate the denisties of the charge carrier in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

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Suppose a pure Si crystal has 5xx10^(28) atoms m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that n_(i)=1.5xx10^(16)m^(-3) .

Suppose a pure Si-crystal has 5xx10^(28) "atoms" m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that n_(i)=1.5xx10^(16)m^(-3) .

Suppose a pure Si crystal has 5 xx 10^(28) atoms m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that n_(i) = 1.5 xx 10^(16) m^(-3) .

Suppose a pure Si crystal has 5 xx 10^(28) atoms m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that n_(i) = 1.5 xx 10^(16) m^(-3) .

Suppose a pure Si crystal has 5 xx 10^(28) atoms m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that n_(i) = 1.5 xx 10^(16) m^(-3) .