Home
Class 12
PHYSICS
Assertion: A P-N photodiode is made fro...

Assertion: A `P-N` photodiode is made from a semiconductor for which `E_(g)=2.8 eV`. This photo diode will not detect the wavelength of `6000 nm`.
Reason: A `PN` photodiode detect wavelength `lambda` if `(hc)/(lambda)gtE_(g)`.

Promotional Banner

Similar Questions

Explore conceptually related problems

A p -n photo diode is fabricated from a semi- conductor with a band gap of 2.8 eV. Can it detect the wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band - gap of 2.8 eV . Can it detect a wavelength of 6000nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV . Can it detect a wavelength of 6000nm ?

A p -n photodiode is fabricated from a semiconductor with band gap of 2.8 eV . Can it detect a wavelength of 6000nm ?

A photodiode is fabricated from a semiconductor with band gap of 2.8 eV . Can it detect a wavelength of 6000 nm ?

A p-n photodiode is fabricated from a semiconductor with hand gap of 2.8 eV . Can it detect a wavelength of 6000 n m ?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV can it detect a wavelength of 6000 nm