Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium.
Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.

The question given below consist of an assertion (A) and a reason ( R). Use the following key to choose the appropriate answer to these questions from the codes (a), (b), ( c) and (d) given below: (a) Both A and R are true and R is the correct explanation of A. (b) Both A and R are true but R is NOT the correct explanation of A. (c) A is true but R is false. (d) A is false and R is also false. Assertion: The energy gap between the valence band and conduction band is greater in silicon than germanium. Reason: Thermal energy produces fewer minority carries in silicon than in germanium.

Assertion: the energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason: thermal energy produces fever minority carriers in silicon than in ghermanium

If the energy gap between valence band and conduction band is 5 eV, then it is

Energy gap between valence band and conduction band is called as the ……….

The energy gaps (E_(g)) between valence band and conduction band for diamond, silicon and germanium are in the order