In a silicon diode,the forward current changes by `2.5mA` when the voltage changes from 0.08 to 0.09V then the forward dynamic ac resistance of the diode is

In silicon diode, the reverse current increases from 10A to 20 muA . When the reverse voltage change from 2V to 4V . Find the reverse a.c. resistance of the diode

In a p-n-p transistor in CB circuit, the emitter current changes from 0.6 mA to 0.4 mA , when the bae emitter voltage is changed from 0.68 V to 0.64 V. The input resistance of the transistor is

If the forward voltage in a semiconductor diode is changed from 0.5V to 0.7 V, then the forward current changes by 1.0 mA. The forward resistance of diode junction will be

While a collector to emitter voltage is constant in a transistor, the collector current changes by 8.2 mA when the emitter current changes by 8.3 mA . The value of forward current ratio h_(fe) is

If the forward voltage in a semiconductor diode is chaged form 0.5 V to 2 V, then the forward current changed by 1.5 mA. The forward resistance of diode will be-

In a silicon transistor, the base current is changed by 20 muA . This results in a change of 0.02 V in base to emitter voltage and a change of

The change in current through a junction diode is 1.2 mA when the forward bias voltage is changed by 0.6 V. The dynamic resistance is

In a reverse biased diode, when the applied voltage changes by 1V , the current is found to change by 0.5muA . The reversebiase resistance of the diode is

When the plate voltage applied to a diode value is changed from 40 V to 42 V , the plate current increases from 50 mA to 60 mA . Calculate the dynamic plate resistance at the operating condition.