Determine the number density of donor atoms which have to be added to an intrinsic germanium to produce an `n`-type semiconductor of conductity `0.06Sm^(-1)`. Given the mobility of electrons `=0.39m^(2)V^(-1)s^(-1)`. Neglect the contribution of holes to the conductivity.

Determine the number of density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an N-type semi-conductor of conductivity 6.4 Omega cm^(-1) . Given that mobility of electron in N-type Ge is 4000 cm^(2)//Vs . Neglect the contribution of holes. to conductivity.

Determine the number density of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semiconductor of conductivity 5Omega^(-1)cm^(-1) , given that the mobility of electron in n-type germanium is 3900 cm^(2)V^(-1)s^(-1) . Neglect the contribution of holes to conductivity.

The number desnity of donor atoms which have to be added to an intrinsic germanium semiconductor to produce an n-type semiconductor of conductivity 5 ohm^(-1) cm^(-1) is axx10^(15)cm^(-3) . Given that the mobility of electron in n-type Ge is 3900 cm^(2)//Vs , Neglect the contribution of holes to conductivity. What is the integer value of a?

What should be the order of number density of donor atoms to obtain an N semiconductor of conductivity 5 S cm^-1 . The mobility of electrons is 4000 cm^2//Vs and the number density of holes is negligible.

A semiconductor is made extrinsic by adding trivalent impurity. The resulting p-type semiconductor should be of conductivity 12 mho m^(-1) . Mobility of holes is 400 cm^(2)V^(-1)s^(-1) . Neglecting electron contribution find the number density of accetor atoms. charge on an electron = 1.6xx10^(-19) C .

What amount of inpurity of atomic density in added toform N-type semiconductor in Ge semiconductor of conductivity sigma is 5Omega^(-1)cm^(-1) Mobility of electron in N-type semiconductor is 3900 cm^(2)V^(-1)s^(-1) . Ignore conductivity due to hole. (e=1.6xx10^(-19)C)

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) The conductivity of doped semiconductor (in Sm^(-1)) is

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is