Home
Class 12
PHYSICS
A p-n photodiode is made of a material w...

A `p-n` photodiode is made of a material with a band gap of `2.0 eV`. The minimum frequency of the radiation that can be absorbed by the material is nearly

A

`10xx10^(14)Hz`

B

`20xx10^(13)Hz`

C

`5xx10^(13)Hz`

D

`5xx10^(14)Hz`

Text Solution

Verified by Experts

The correct Answer is:
D
Band gap `E_(g)=hv=2eV=2xx1.6xx10^(-19)J`
`therefore"The minimum frequency is given by "hv_(min)=2eV`
`thereforev_(min)=(2xx1.6xx10^(-19))/(h)=(3.2xx10^(-19))/(6.6xx10^(-34))`
`~~0.5xx10^(15)=5xx10^(14)Hz`
Promotional Banner

Topper's Solved these Questions

  • SOLID STATE ELECTRONS

    MTG-WBJEE|Exercise WB JEE WORKOUT (CATEGORY 3 : Single Option Correct Type)|15 Videos

  • SOLID STATE ELECTRONS

    MTG-WBJEE|Exercise WB JEE WORKOUT (CATEGORY 3 : One or More than one option Correct Type)|10 Videos

  • PARTICLE NATURE OF LIGHT AND WAVE PARTICLE DUALISM

    MTG-WBJEE|Exercise WB JEE PREVIOUS YEARS QUESTIONS|15 Videos

  • THERMODYNAMICS

    MTG-WBJEE|Exercise WB JEE Previous Years Questions|12 Videos

Similar Questions

Explore conceptually related problems

A p-n photodiode is made of a material with a band gap of 2 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly (hc= 1240 eV nm)

A p - n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Which of the following wavelengths it can detect?

A p-n photodiode is fabricate from a semiconductor with a band gap of 2.5eV . It can detect a singal of wavelength