The breakdown in a reverse biased p-n junction diode is more likely to occur due to

Options

A. large velocity of the minority charge carriers if the doping concentration is small.
B. large velocity of the minority charge carriers if the doping concentration is large.
C. strong electric field in a depletion region if the doping concentration is small.
D. strong electric field in the depletion region if the doping concentration is large.

Answer

A, D

Explanation

Ionization takes place because minority charge carriers are accelerated due to reverse biasing and strike atoms which in turn cause secondary electrons and thus more number of charge carriers.
Depletion region have large number of ions because doping concentration is large. This results in strong electric field.