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In an n-p-n transistor...

In an n-p-n transistor

A

the emitter has higher degree of doping compared to that of the collector

B

the collector has higher degree of doping compared to that of the emitter

C

both the emitter and collector have same degree of doping

D

the base region is most heavily doped.

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The correct Answer is:
### Step-by-Step Solution: 1. **Understanding the NPN Transistor Structure**: - An NPN transistor consists of three regions: the emitter (E), the base (B), and the collector (C). The emitter is typically made of n-type semiconductor material, the base is p-type, and the collector is also n-type. 2. **Doping Levels**: - In an NPN transistor, the emitter is heavily doped with electrons (n-type), while the base is lightly doped (p-type). The collector is also n-type but is less doped than the emitter. 3. **Comparison of Doping Levels**: - The emitter has a higher degree of doping compared to both the base and the collector. This is crucial for the operation of the transistor, as it allows for efficient injection of charge carriers (electrons) from the emitter into the base. 4. **Conclusion**: - Therefore, the correct statement regarding the doping levels in an NPN transistor is that the emitter is highly doped compared to the collector and the base.
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