The dc common emitter current gain of a n-p-n transistor is 50. The potential difference applied across the collector and emitter of a transistor used in CE configuration is, `V_(CE)=2V`. If the collector resistance, `R_(C)=4Omega,` the base current `(I_B)` and the collector current `(I_(C))` are

The dc common emitter current gain of a n-p-n transistor is 50. The potential difference applied across the collector and emitter of a transistor used in CE configuration is, V_(CE) = 2 V. If the collector resistance, R_C = 4 kOmega , the base current (I_B) and the collector current (I_C) are

The dc common emitter current gain of a n - p - n transistor is 50 . The potential difference applied across the collector and emitter of a transistor used in CE configuration is V_(CE) = 2 V . If the collector resistance R_C = 4KOmega , the base current and the collection current (I_B) and the collector current (I_C) are

The potential difference across the collector of a transistor, used in common emitter mode is 1.5 V, with the collector resistance of 3 kOmega , the emitter current is [ beta= 50 ]

The potential difference across the collector of a transistor, used in common emitter mode is 1.5 V, with the collector resistance of 3 kOmega , the emitter current is [ beta- 50 ]

The potential difference across the collector of a transistor, used in common emitter mode is 1.5V , with the collector resistance of 3 kOmega . Find (i) the emitter current and (ii) the base current, if d.c. gain of the transistor is 50.

The current gain of a transistor in common emitter configuration is 80. If the emitter current be 8.1 mA, then the collector current is

For a p-n-p transistor in CB configuration, the emitter current I_(E) is 1mA and alpha = 0.95 . The base current and collector current are