A hole diffuses from the p-side to the n-side in a p-n junction.This means that

When a p-type impurity is doped in a semiconductor,a large number of holes are created. This does not make the semiconductor chared.But when holes diffuse from the p-side to the n-side in a p-n junction,the n-side gets positvely charged.Explain.

When a p-type impurity is doped in a semiconductor,a large number of holes are created. This does not make the semiconductor chared.But when holes diffuse from the p-side to the n-side in a p-n junction,the n-side gets positvely charged.Explain.

When a p-type impurity is doped in a semiconductor, a large number of holes are created. This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction,the n-side gets positvely charged.Explain.

The potential barrier exists across the junction is 0.2volt.What minimm kinetic energy a hole should have to diffuse from the p-side to the n-side if (a)the junction is unbiased,(b)the junction is forward-biased at 0.1volt and ©the junction is reverse-biased at 0.1volt?

The potential barrier exists across the junction is 0.2volt.What minimm kinetic energy a hole should have to diffuse from the p-side to the n-side if (a)the junction is unbiased,(b)the junction is forward-biased at 0.1volt and ©the junction is reverse-biased at 0.1volt?

The n-side of the depletion layer of a p-n junction :