In an intrinsic semiconductor the energy gap `E_(g) is 1.2 eV`. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at `600K` and `300K`? Assume that temperature dependence intrinstic concentration `n_(i)` is given by
`n_(i)=n_(0) exp ((-E_(g))/(2k_T))`, where `n_(0)` is a constant and `k_=8.62xx10^(-5)eV//K`.

Explanation

To find the ratio of conductivity at \(600K\) and \(300K\) for an intrinsic semiconductor with a given energy gap \(E_g = 1.2 eV\), we can follow these steps:

### Step 1: Understand the relationship between conductivity and intrinsic carrier concentration
The conductivity \(\sigma\) of an intrinsic semiconductor is given by the formula:
\[ \sigma = q(n + p) \]
where \(q\) is the charge of an electron, \(n\) is the electron concentration, and \(p\) is the hole concentration. For intrinsic semiconductors, \(n = p = n_i\), so:
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