A `p-n` photodiode is made of a material with a band gap of `2.0 eV`. The minimum frequency of the radiation that can be absorbed by the material is nearly

A p-n photodiode is made of a material with a band gap of 3.0 eV . The minimum frequency of the radiation that can be absorbed by the material is nearly

A p-n photodiode is made of a material with a band gap of 2 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly (hc= 1240 eV nm)

A p-n photodiode is made of a material with a band gap of 2 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly (hc= 1240 eV nm)

A p-n photodiode is made of a material with a band gap of 1 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly (hc= 1240 eV nm)

A p-n photodiode is made of a material with ,band gap of 2.0 ev The minimum frequency of the radiation that can be absorbed by the material is nearly