The resistivity of pure germanium at a particular temperature is `0.52Omegam`. If the material is doped with `10^(20)` atoms `m^(-3)` of a trivalent impurity material, determine the new resistivity. The electron and hole mobilities are givenn to be `0.2` and `0.4 m^(2)V^(-1)s^(-1)` respectively.

The intrinsic conductivity of germanium at 27^(@) is 2.13 mho m^(-1) and mobilities of electrons and holes are 0.38 and 0.18 m^(2) V^(-1) s^(-1) respectively. The density of charge carriers is

A potential difference of 2.5 V is applied across the faces of a germanium crystal plate. The face area of the crystal is 1 cm^(2) and its thickness is 1.0 mm . The free electron concentration in germanium is 2 xx 10^(19)m^(-3) and the electron and holes mobilities are 0.33m^(2)/V s and 0.17 m^(2)/V s respectively. The current across the plate will be

An intrinsic semiconductor has a resistivity of 0.50 Omega m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m^2 V^(-1) s^(-1) and 0.11 m^2 V^(-1) s^(-1) respectively

An intrinsic semiconductor has a resistivity of 0.50 Omega m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m^2 V^(-1) s^(-1) and 0.11 m^2 V^(-1) s^(-1) respectively