An n-type semiconductor has impurity level `20 meV` below the conduction band. In a thermal collision, transferble enegry is `KT`. The value of `T` for which electrons start to jump in conduction bond is :

A doped semiconductor has impurity levels 32 meV below the conduction band. The semiconductor is -

A doped semiconductor has impurity levels 40 MeV (millielectron volt) below the conduction band Is the material n-type or p-type?

A doped semiconductor has impurity levels 40 MeV (millielectron volt) below the conduction band In a thermal collision,an amount of energy k T is given ot the extra electron loosely bound to the impurity ion and this electron is just able to jump into the conduction band.Calculate the temperature T. Given,Boltzmann's constant , k=8.62 xx 10^(-5) eV K^(-1) .

A doped semiconductor has impurity levels 20 meV below the conduction band. Is the material n-type or p-type? What is the wavelength of light so that the electron of impurity level is just able to jump into conduction band? Use h=6.63xx10^(-34)Js, c=3xx10^(8)m//s .

A doped semiconductor has impurity levels 40 me V below the conductor band. Is the material n-type or p-type? In a thermal collision, an amount kT of energy is given to the extra electron loosely bound to the impurity ion and this electron is just able to jump into the conduction band. Calculate the temperature T. Given k=8.62xx10^(-5) eV//K .