Predict effect on the electrical properties of a silicon crystal at room temperature if every millionth silver atom is replased by an atom of indium. Given, concentration of silicon atoms `=5xx10^(28) m^(-3)`, Intrinsic carrier concentration `=1.5xx10^(16) m^(-3), mue=0.135 m^(2)//Vs and mu_(h)=0.048m^(2)//Vs`.

Calculate the electrical resistivity and conductivity of a silicon crystal if every 10 mollion silicon atoms is replaced by an atom of indium. Given that intrinsic carrier density of silicon = 1.5 xx 10^(16) m^(-3) , atomic weight of silicon = 28.09, density of silicon = 2330 "kg m"^(-3) , mobility of electrons (mu_(n))=0.135 , that of holes (mu_(p))=0.018 , By how many times is the conductivity increased ?

Calculate the conductivity of a semiconductor having electron concentration 5xx10^(12)"cm"^(-3) and hole concentration 8xx10^(13)"cm"^(-3) [mu_(e)=2.3"V"^(-1).s^(-1)."m"^(2)" ""and"" " mu_(h)=0.1"V"^(-1).s^(-1)."m"^(2)]

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6xx10^(16)m^(-3) . If the donor concentration level is 4.8xx10^(20) m^(-3) , then the concentration of holes in the semiconductor is

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6xx10^(16)m^(-3) . If the donor concentration level is 4.8xx10^(20) m^(-3) , then the concentration of holes in the semiconductor is

If a semiconductor has an intrinsic carrier concentration of 1.41 xx 10^(16)//m^(3) when doped with 10^(21)//m^(3) at room temperature will be

A battery of emf 2V is connected across a block of length 0.1m and area of cros-section 1xx10^(-4)m^(2) . If the block is of intrinsic silocon at 300K , find the electron and hole currents. What will be the magnitude of the total current? What will be the magnitude of the total current if germanium is used instead of silicon? Given that for Si at 300K : mu_(e)=0.135m^(2)V^(-1)s^(-1),mu_(h)=0.048m^(2)V^(-1)s^(-1) and intristic carrier concentration n_(i)=1.5xx10^(16)m^(-3) . For Ge at 300K: mu_(e)=0.39m^(2)V^(-1)s^(-1),mu_(h)=0.19m^(2)V^(-1)s^(-1) and n_(i)=2.4xx10^(19)m^(-3)