Draw V-I characteristics of p-n junction diode. Answer the following questions giving reasons:
Why is the current under reverse bias almost independent of the applied potential up to a critical voltage?

Draw V-I Characteristics of a p-n junction diode. Answer the following questions, giving reasons- (i) Why is the current under reverse bias almost independent of the applied potential upto a critical voltage? (ii) Why does the reverse current show a sudden increase at the critical voltage? Name any semiconductor device which operates under the reverse bias in the break down region.

Answer the following questions: Why is the current under reverse bias independent to the applied potential up to a critical voltage?

In V-I characteristics of a p-n junction diode, why is the current under reverse bias almost independent of the applied potential upto a critical voltage?

In V-I characteristics of a p-n junction diode, why is the current under reverse bias almost independence of the applied potential upto a critical voltage?

Draw V-I characteristics of p-n junction diode. Answer the following questions giving reasons: Why does the reverse current show a sudden increase at the critical voltage? Name any semiconductor device which operates under the reverse bias in the breakdown region.

In V - I characteristics of p-n junction in reverse biasing results in

Forward bias characteristics of a p -n junction diode is used in which of the following devices ?