Write meaning of `i=i_(c )+i_(d)`.

Write value of i for K_(2)SO_(4) .

If the arithmetic mean of a_(1),a_(2),a_(3),"........"a_(n) is a and b_(1),b_(2),b_(3),"........"b_(n) have the arithmetic mean b and a_(i)+b_(i)=1 for i=1,2,3,"……."n, prove that sum_(i=1)^(n)(a_(i)-a)^(2)+sum_(i=1)^(n)a_(i)b_(i)=nab .

The fig. shows the variation of photon current with anode potential for a photo-sensitive surface for three different radiation. Let I_(a), I_(b) and I_(c) be the intensities and f_(a), f_(b) and f_(c) be the frequency for the curves a,b and c respectively.

The fig. shows the variation of photon current with anode potential for a photo-sensitive surface for three different radiation. Let I_(a), I_(b) and I_(c) be the intensities and f_(a), f_(b) and f_(c) be the frequency for the curves a,b and c respectively.

Let x_1,x_2,x_3,………,x_n be n observations . Let W_i = lx_i + k for i=1,2,……,n, where l and k are constants. If the mean of x_i's is 48 and their standard deviation is 12, the mean of w_i's is 55 and standard deviation of w_i's is 15, the values of l and k should be ..........

Write value of i for K_(4)[Fe(CN)_(6)] .

Consider a an equilateral prism ABC of glass (mu= (3)/(2)) placed in water (mu=(4)/(3)) {:("Column"I, "Column"II), ((A) FG "is parralel to" BC , (P) "Maximum deviation"),((B) i_(1) = 90^(@) , (Q) "Minimum deviation"), ((C) i_(1)= i_(2) = sin^(-1)((9)/(16)) , (R) TIR " will take place at surface" AC), ((D) EF "is perpendicular to" AB , (S) "No" TIR "will take place at surface" BC):}

The V to I characteristic of a silicon diode is shown in the figure. Calculate the resistance of the diode at (a) I_(D)=15mA and (b) V_(D)=-10V .