To obtain n-type semiconductor , the impurity introduced is

To obtain n-type extrinsic semiconductor, the impurity element to be added to germanium should be of valency

To obtain p-type extrinsic semiconductor, the impurity element to be added to germanium should be of valency

To produce n - type semiconductor which impurity is added into the silicon?

To obtain electrons as majority charge carriers in a semiconductor, the impurity mixed is

To obtain electrons as majority charge carriers in a semiconductor, the impurity mixed is

The conductivity of intrinsic semiconductors can be increased by adding a suitable impurity. This process is called __(P)__. This can be done with an impurity which is __(Q)_ rich or deficient as compared to the semiconductor. Such impurities introduce __(R)__ defects in them. Electron rich impurities result in __(S)__ type semiconductors while electron deficit impurities result in __(T)___ type semiconductors .

The conductivity of intrinsic semiconductors can be increased by adding a suitable impurity . This process is called underline(A) . This can be done with an impurity which is Such impurities introduce underline(B) rich or deficient as compared to the semiconductor. Such impurities introduce underline(C) defects in them. Electron rich impurities result in D type semiconductors while electron deficit impurities result in E type semiconductors .