Can we measure the potential difference of a p-n junction by putting a sensitive voltmeter across its terminals?

p-n junction is a semiconductor diode. It is obtained by bringing p-type semiconductor inclose contact with n-type semiconductor. A thin layer is developed at the p-n junction which is devoid of any charge carrier but has immobile ions. It is called depletion layer. At the junction a potential barrier appears, which does not allow the movement of majority charge carriers across the junction in the absence of any biasing of the junction. p-n junction offer low resistance when forward biased and high resistance when reverse biased. Read the above paragaph and answer the following question: (i) Can we measure the potential barrier of p-n junction by putting a sensitive voltmeter across its terminals? (ii) What practical lesson do you draw from the above study?

Assertion: We can measure the potential barrier of a PN junction by putting a sensitive voltmeter across its terminals. Reason: The current through the PN junction is not same in forward and reversed bias.

Assertion : We cannot meausre that potential barrier of p-n junction by putting a sensitive voltmeter across its terminals. Reason: In the depletion layer, there are no free elctrons or holes and in the absence of forward bias, it offers, infinite, resistance.

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction ?