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At temperature 300 K number density of e...

At temperature 300 K number density of electrons and holes in pure silicon is `1.5xx10^(16)m^(-3)`. The number density of hole increase by `4.5xx10^(22)m^(-3)` dopping the indium impurity so calculate number denstiy of electron.

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`n_(e )=5xx10^(9)m^(-3)`
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