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What amount of inpurity of atomic densit...

What amount of inpurity of atomic density in added toform N-type semiconductor in Ge semiconductor of conductivity `sigma` is `5Omega^(-1)cm^(-1)` Mobility of electron in N-type semiconductor is 3900 `cm^(2)V^(-1)s^(-1)`. Ignore conductivity due to hole. `(e=1.6xx10^(-19)C)`

Text Solution

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`sigma =5Omega^(-1)cm^(-1)=500Omega^(-1)m^(-1)`
`mu_(e )=3900 cm^(2)V^(-1)s^(-1)=0.39m^(2)V^(-1)s^(-1) `
Now `sigma = en_(e )mu_( e)`
`therefore n_( e )=(sigma)/(e mu_(e ))`
`therefore n_(e )=(500)/(1.6xx10^(-19)xx0.39)`
`therefore n_(e )=8.013 xx 10^(21) m^(-3)`
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