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In intrinsic semiconductor the drift ve...

In intrinsic semiconductor the drift velocity of holes and electron are respectivelty `v_(h) and v_(e )` then, ……..

A

`v_(e ) lt v_(h)`

B

`v_(e ) = v_(h)`

C

`v_(e ) gt v_(h)`

D

None of these

Text Solution

Verified by Experts

The correct Answer is:
C
`v_(e ) gt v_(h)`
Hole is steady in covalent bond. Whereas electrons are in motion.
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KUMAR PRAKASHAN-SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS -Section-D : Multiple Choice Questions (MCQs) (MCQs From .DARPAN. Based On Textbook)
  1. Holes and electrons are …..

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  2. To prepare the n-type semiconductor from a tetravalent Si or Ge, the i...

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  3. In intrinsic semiconductor the drift velocity of holes and electron a...

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  4. In a semiconducting material the mobilities of electrons and holes are...

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  5. To make a p-type semiconductor out of pure silicon, it has to mix atom...

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  6. p-type semiconductor is formed when …….. (A) As impurity is mixed i...

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  7. Is there any benefit to adding trivalent or pentavalent impurity to th...

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  8. Trivalent and pentavalent impurities are ….., respectively in terms o...

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  9. The ratio of number density of free electron and hole in p-type semico...

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  10. The number density of electron is 4.5xx10^(22)m^(-3) and number densi...

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  11. The number density of electron is 7xx10^(12)m^(-3) and number density ...

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  12. Which of the diagram shown in figure represents variation of total me...

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  13. What is the unit of energy?

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  14. n-type semiconductor ………

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  15. In one atom of As is added per 10^(3) atoms of Ge then the number of f...

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  16. If one Al atom added to 10^(9) per atom of Si then charge on holes in ...

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  17. In pure crystal of silicon at 300 K temperature having number of atom ...

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  18. Therefore are 6xx10^(19) electrons per unit cubic metre of pure semico...

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  19. The number density of electron is a semiconductor is 8xx10^(13) cm^(-3...

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  20. What amount of inpurity of atomic density in added toform N-type semic...

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