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p-type semiconductor is formed when …….....

p-type semiconductor is formed when ……..
(A) As impurity is mixed in Si.
(B) Al impurity is mixed in Si.
(C ) B impurity is mixed in Ge.
(D) P impurity is mixed in Ge.

A

A and C

B

A and D

C

B and C

D

B and D

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The correct Answer is:
C
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KUMAR PRAKASHAN-SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS -Section-D : Multiple Choice Questions (MCQs) (MCQs From .DARPAN. Based On Textbook)
  1. In a semiconducting material the mobilities of electrons and holes are...

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  2. To make a p-type semiconductor out of pure silicon, it has to mix atom...

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  3. p-type semiconductor is formed when …….. (A) As impurity is mixed i...

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  4. Is there any benefit to adding trivalent or pentavalent impurity to th...

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  5. Trivalent and pentavalent impurities are ….., respectively in terms o...

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  6. The ratio of number density of free electron and hole in p-type semico...

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  7. The number density of electron is 4.5xx10^(22)m^(-3) and number densi...

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  8. The number density of electron is 7xx10^(12)m^(-3) and number density ...

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  9. Which of the diagram shown in figure represents variation of total me...

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  10. What is the unit of energy?

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  11. n-type semiconductor ………

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  12. In one atom of As is added per 10^(3) atoms of Ge then the number of f...

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  13. If one Al atom added to 10^(9) per atom of Si then charge on holes in ...

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  14. In pure crystal of silicon at 300 K temperature having number of atom ...

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  15. Therefore are 6xx10^(19) electrons per unit cubic metre of pure semico...

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  16. The number density of electron is a semiconductor is 8xx10^(13) cm^(-3...

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  17. What amount of inpurity of atomic density in added toform N-type semic...

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  18. Potential near the junction in p-n junction is zero then potential at ...

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  19. In p-n junction, depletion barrier near the junction is due to ………

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  20. If proportion of impurity is less in p-n junction ……..

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