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The number density of electron is 4.5xx1...

The number density of electron is `4.5xx10^(22)m^(-3)` and number density of holes is `4.5xx10^(9)m^(-3)`. This semiconductor is ………..

A

p-type

B

n-type

C

intrinsic type

D

p and n both type

Text Solution

Verified by Experts

The correct Answer is:
B
n-type
Here `n_( e)=4.5xx10^(22)m^(-3) and n_(h)=4.5xx10^(9)m^(-3)`
`therefore n_(e ) gt n_(h)` therefore n-type semiconductor.
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KUMAR PRAKASHAN-SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS -Section-D : Multiple Choice Questions (MCQs) (MCQs From .DARPAN. Based On Textbook)
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  2. The ratio of number density of free electron and hole in p-type semico...

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  3. The number density of electron is 4.5xx10^(22)m^(-3) and number densi...

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  4. The number density of electron is 7xx10^(12)m^(-3) and number density ...

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  5. Which of the diagram shown in figure represents variation of total me...

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  6. What is the unit of energy?

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  7. n-type semiconductor ………

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  8. In one atom of As is added per 10^(3) atoms of Ge then the number of f...

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  9. If one Al atom added to 10^(9) per atom of Si then charge on holes in ...

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  10. In pure crystal of silicon at 300 K temperature having number of atom ...

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  11. Therefore are 6xx10^(19) electrons per unit cubic metre of pure semico...

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  12. The number density of electron is a semiconductor is 8xx10^(13) cm^(-3...

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  13. What amount of inpurity of atomic density in added toform N-type semic...

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  14. Potential near the junction in p-n junction is zero then potential at ...

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  15. In p-n junction, depletion barrier near the junction is due to ………

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  16. If proportion of impurity is less in p-n junction ……..

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  17. If the proportion of impurity increases in semiconductor in p-n juncti...

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  18. Breakdown voltage means ……..

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  19. Increasing forward voltage in diode, the width of depletion layer is …...

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  20. The ratio of resistance of forward bias and reverse bias in p-n connec...

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