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n-type semiconductor ………...

n-type semiconductor ………

A

energy levels of impurity atoms `E_(D)` are nearer to valence energy level `E_(V)`.

B

energy levels of `E_(D)` are nearer to conduction energy levels `E_(C )`.

C

energy levels `E_(D)` are in middle of energy levels `E_(C ) and E_(V)`.

D

energy level `E_(D)` are on the top of energy levels.

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The correct Answer is:
B
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KUMAR PRAKASHAN-SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS -Section-D : Multiple Choice Questions (MCQs) (MCQs From .DARPAN. Based On Textbook)
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  2. What is the unit of energy?

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  3. n-type semiconductor ………

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  4. In one atom of As is added per 10^(3) atoms of Ge then the number of f...

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  5. If one Al atom added to 10^(9) per atom of Si then charge on holes in ...

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  6. In pure crystal of silicon at 300 K temperature having number of atom ...

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  7. Therefore are 6xx10^(19) electrons per unit cubic metre of pure semico...

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  8. The number density of electron is a semiconductor is 8xx10^(13) cm^(-3...

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  9. What amount of inpurity of atomic density in added toform N-type semic...

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  10. Potential near the junction in p-n junction is zero then potential at ...

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  11. In p-n junction, depletion barrier near the junction is due to ………

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  12. If proportion of impurity is less in p-n junction ……..

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  13. If the proportion of impurity increases in semiconductor in p-n juncti...

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  14. Breakdown voltage means ……..

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  15. Increasing forward voltage in diode, the width of depletion layer is …...

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  16. The ratio of resistance of forward bias and reverse bias in p-n connec...

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  17. p-side of semiconductor is earthing and -2V potential applied at n-sid...

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  18. What is responsible for depletion barrier in depletion layer?

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  19. What is the width n cm of depletion layer in p-n junction?

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  20. Increasing reverse bias voltage applied to p-n junction diode ……..

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