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In one atom of As is added per 10^(3) at...

In one atom of As is added per `10^(3)` atoms of Ge then the number of free electron in one mole of Ge will be ……..

A

`10^(17)`

B

`10^(20)`

C

`10^(10)`

D

`10^(13)`

Text Solution

Verified by Experts

The correct Answer is:
C
`10^(10)`
1 As atom per `10^(13)` Ge atom then,
at `10^(23)` atoms of Ge?
`N=(1xx10^(23))/(10^(13))=10^(10)`
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KUMAR PRAKASHAN-SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS -Section-D : Multiple Choice Questions (MCQs) (MCQs From .DARPAN. Based On Textbook)
  1. What is the unit of energy?

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  2. n-type semiconductor ………

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  3. In one atom of As is added per 10^(3) atoms of Ge then the number of f...

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  4. If one Al atom added to 10^(9) per atom of Si then charge on holes in ...

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  5. In pure crystal of silicon at 300 K temperature having number of atom ...

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  6. Therefore are 6xx10^(19) electrons per unit cubic metre of pure semico...

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  7. The number density of electron is a semiconductor is 8xx10^(13) cm^(-3...

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  8. What amount of inpurity of atomic density in added toform N-type semic...

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  9. Potential near the junction in p-n junction is zero then potential at ...

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  10. In p-n junction, depletion barrier near the junction is due to ………

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  11. If proportion of impurity is less in p-n junction ……..

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  12. If the proportion of impurity increases in semiconductor in p-n juncti...

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  13. Breakdown voltage means ……..

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  14. Increasing forward voltage in diode, the width of depletion layer is …...

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  15. The ratio of resistance of forward bias and reverse bias in p-n connec...

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  16. p-side of semiconductor is earthing and -2V potential applied at n-sid...

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  17. What is responsible for depletion barrier in depletion layer?

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  18. What is the width n cm of depletion layer in p-n junction?

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  19. Increasing reverse bias voltage applied to p-n junction diode ……..

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  20. Keeping forward bias voltage from 0.6 V to 0.7 V in a p-n junction dio...

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