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In the middle of the electron layer of a...

In the middle of the electron layer of a reverse biased p-n junction, the ……

A

electric field is zero.

B

electric field is maximum.

C

potential is zero

D

potential is maximum.

Text Solution

Verified by Experts

The correct Answer is:
B

electric field is maximum.

If dv = 0, E is maximum.
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KUMAR PRAKASHAN-SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS -Section-D : Multiple Choice Questions (MCQs) (MCQs asked in Competitive Exams)
  1. By increasing the temperature, the specific resistance of a conductor ...

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  2. The difference in the variation of resistance with temperature in a me...

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  3. In the middle of the electron layer of a reverse biased p-n junction, ...

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  4. A piece of copper and another of germanium are cooled from room temper...

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  5. The manifestion of band structure in solids is due to …….

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  6. When p-n junction diode is forward biased ………

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  7. The electrical conductivity of a semiconductor of a semiconductor incr...

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  8. In a full wave rectifier circuit operating from 50 Hz mains frequency...

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  9. Ratio of number density of holes is (7)/(5) and ratio of their current...

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  10. Which of the following is true ?

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  11. A charge of 2 xx 10^(-2) C moves at 30 revolutions per second in a ci...

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  12. A solid which is transparent to visible light an whose conductivity in...

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  13. As shown in the following figure take A and B input waveforms. Sketch...

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  14. A logic circuit is shown in the diagram. Draw the output signal at the...

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  15. Carbon, silicon and germanium have four valence electrons each. At roo...

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  16. Figure shows electric field lines in which an electric dipole P is pla...

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  17. As shown in the following figure, take A and B input waveforms. Sketch...

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  18. Which logic gate is represented by the following logic gates?

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  19. If the output of the OR gate is connected to both inputs of the NAND g...

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  20. Write the truth table for a NAND gate connected as given in figure. ...

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