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Barrier potential of a p-n junction diod...

Barrier potential of a p-n junction diode does note depend on …….

A

doping density

B

diode design

C

temperature

D

forward bias

Text Solution

Verified by Experts

The correct Answer is:
B

diode design
Potential barrier does not depend on design but depend on temperature, doping density and forward bias.
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KUMAR PRAKASHAN-SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS -Section-D : Multiple Choice Questions (MCQs) (MCQs asked in Competitive Exams)
  1. When a p-n junction diode is reverse biased, the flow of current acros...

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  2. The output of OR gate is 1 ……..

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  3. Barrier potential of a p-n junction diode does note depend on …….

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  4. Which gate will be obtained by joining the two inputs of the NAND gate...

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  5. Reverse bias applied to a junction diode ……

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  6. In semiconductor at a room temperature ………

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  7. The peak voltage in the output of a half wave diode rectifier fed wit...

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  8. The output of OR gate is 1 ……..

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  9. Choose the only false statement from the following.

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  10. Application of a forward bias to a p-n junction ………

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  11. Zener diode use for ….

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  12. An AND gate is followed by a NOT gate in series with two inputs A and ...

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  13. Justify the output waveform (Y) of the OR gate for the following input...

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  14. In a semiconducting material the mobilities of electrons and holes are...

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  15. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

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  16. Obtain the resonant frequency and Q-factor of a series LCR circuit wit...

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  17. A gas in equilibrium has uniform density and pressure throughout its v...

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  18. A p-n photodiode is fabricated from a semiconductor with a band gap o...

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  19. Which one of the following statement is false?

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  20. Which of the following device acts a complete electronic circuit?

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