The potential barrier of the p-n junction depends ……..
(i) On kind of semiconductor material (ii) On amount of doping (iii) On temperature

Options

A. Only (i) and (ii)
B. Only (ii)
C. Only (ii) and (iii)
D. Only (i), (ii) and (iii)

Answer

D

Explanation

Only (i), (ii) and (iii)
The potential barrier depend on kind of semiconductor, amount of doping and temperature it is on all three.
[For `Si, V_(0)=0.7V`, For `Ge, V_(0)=0.3V]`