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When the electromagnetic radiation of maximum wavelength of 2480 nm is incident on semiconductor. The band gap energy of semiconductor is ……eV. `[6.6xx10^(-34)JS, C=3xx10^(8)m//s, 1eV=1.6xx10^(-19)J]`

A

0.9

B

0.7

C

0.5

D

1.1

Text Solution

Verified by Experts

The correct Answer is:
C
0.5
`E_(g)=(hc)/(lambda)`
`E_(g)=(6.6xx10^(-34)xx3xx10^(8))/(248xx10^(-8)xx1.6xx10^(-19))`
`=(19.8xx10^(-26))/(396.8xx10^(-27))=0.049899xx10^(1)~~0.5eV`
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KUMAR PRAKASHAN-SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS -Section-D : Multiple Choice Questions (MCQs) (MCQs asked in Competitive Exams)
  1. Which logic gate is represented by the following logic gates?

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  2. The direction of the electric field in p-n junction diode is …….

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  3. When the electromagnetic radiation of maximum wavelength of 2480 nm is...

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  4. To create AND gate require ……NAND gate.

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  5. What kind of p-n junction diode does not require any kind of bias?

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  6. The doping of minute quantity of antimony to a silicon crystal makes i...

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  7. How much is potential barrier in Si diode at room temperature?

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  8. When will the conductivity of a Ge semiconductor decrease?

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  9. Write the symbol, truth table, function and Boolean equation for OR g...

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  10. n-type semiconductor is obtained on doping intrinsic germanium by …….

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  11. A hole in a p-type semiconductor is ……. in a covalent bond.

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  12. An AND gate is followed by a NOT gate in series with two inputs A and ...

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  13. In the shown figure the focal length of equivalent system in the form ...

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  14. Seperated p-type semiconductor is electrically ………

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  15. Name the gate, which represent the Boolean expression y=bar(A*B)

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  16. An electron hole pari is formed when light of maximum wavelength 6000...

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  17. The boolean expression of NOR gate is…….

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  18. Which of the following is not a type of tissue ?

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  19. The output of AND gate is 1, so ……

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  20. The ratio of resistance of forward bias and reverse bias in p-n connec...

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