In a `p-n` junction diode having depletion layer of thickness `10^(-6)m`, the potential across it is `0.1V`. The electric field produced is

In a p-n junction diode having depletion layer of thickness 10^(-6)m , the potential across it is 1V . The electric field produced is

In p-n junction, having depletion layer of thickness 2 ×10^(-6)m the potential difference across it is 0.2 V. The electric field is

In p-n junction, having depletion layer of thickness 2 ×10^(-6)m the potential difference across it is 0.2 V. The electric field is

In a p-n junction having depletion layer of thickness 10^(-6) m the potential across it is 0.3 V . Then the electric field is Hint = E= V/d

In a p-n junction having depletion layer of thickness 10^(-6) m the potential across it is 0.3 V . Then the electric field is Hint = E= V/d

What is p-n junction diode ? Define depletion layer.

In an unbiased p-n junction diode the thickness of the deplection layer is 7xx10^(-6) m and the potential barrier is 0.7 V . The electric field in this region is