The energy gap of pure `Si` is `1.1 eV` The mobilities of electrons and holes are respectively `0.135 m^(2) V^(-1) s^(-1)` and `0.048 m^(2) V^(-1) s^(-1)` and can be taken as independent of temperature. The intrinsic carrier concentration is given by `n_(i) = n_(0) e^(-Eg//2kT)`.
Where `n_(0)` is a constant, `E_(g)` The gap width and `k` The Boltmann's constant whose vaue is `1.38 xx 10^(-23) JK^(-1)` The ratio of the electrical conductivities of `Si` at `600 K` and `300 K` is.