in an n-type semiconductor, the donor energy level lies (a) at the center of the energy gap (b) just below the conduction band (c)just above the valence band (d) in the conduction band

In a good conductor, what is the energy gap between the conduction band and the valence band.?

The energy gap between conductionband and valence band is of the order of 0.07 eV. It is a/an

In a doped semiconductor, the impurity level is 40 meV above the valence band. The semicoductor is

The energy band gap of Si is

An n-type semiconductor has donor levels at 500 meV above the valence band, the frequnecy of light required to create a hole is nearly

Which of the following equations correctly represents the temperature variation of energy gap between the conduction and valence bands for Si?

Assertion : The electrons in the conduction band have higher energy than those in the valence band of a semiconductor Reason : The conduction band lies above the energy gap and valence band lies below the energy gap.

In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of

In an semiconductor the separation between conduction band and valence band is of the order of

Assertion (A) : The electrical conductivity of a semiconductor increases with increase in temperature. Reason (R ) : With increase in temperature, large number of electrons from the valence band can jump to the conduction band.