In V-I characteristics of a p-n junction diode, why is the current under reverse bias almost independent of the applied potential upto a critical voltage?

Draw V-I Characteristics of a p-n junction diode. Answer the following questions, giving reasons- (i) Why is the current under reverse bias almost independent of the applied potential upto a critical voltage? (ii) Why does the reverse current show a sudden increase at the critical voltage? Name any semiconductor device which operates under the reverse bias in the break down region.

A p-n junction diode is reverse biased. Then

Barrier potential of a p-n junction diode does not depend on

Barrier potential of a p-n junction diode does not depend on

Forward bias characteristics of a p -n junction diode is used in which of the following devices ?

In a p-n junction diode, the barrier potential opposes diffusion of

The V-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is

The V-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is

In a p-n junction diode the value of drift current through depletion region

In the voltage current (V-l) characteristics of junction diode (figure) the point A and B corresponds to