In semiconductor the concentrations of electron and holes are `8xx10^(18)//m^(3)` and `5xx10^(18)//m` respectively. If the mobilities of electrons and hole are `2.3 m^(2)//`volt-sec and `0.01m^(2)//` volt-sec respectively, then semicondutor is

In a semiconductor the concentrations of electrons and holes are 8xx10^(18)//m^(3) and 5xx10^(18)//m^(3) respectively. If the mobilities of electrons and hole are 2.3m^(2)/"volt-sec" and 0.01m^(2)//"volt-sec" respectively, then semiconductor is-

A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1 cm^(2) and thickness 0.5 mm . If the concentration of electrons in Ge is 2xx10^(19)//m^(3) and mobilities of electrons and holes are 0.36(m^(2))/(vol t-sec) and 0.14 (m^(2))/(vol t-sec) respectively, then the current flowing through the plate will be

A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1cm^(2) and thickness 0.5 mm. if the concentration of electrons in Ge is 2xx10^(19)//m^(3) and mobilities of electrons and holes are 0.36 (m^(2))/("volt-sec") and 0.14(m^(2))/("volt-sec") respectivity, then the current flowing through the plate will be-

In a semiconductor, the concentration of electrons is 8xx10^13cm and that of holes is 5xx10^12cm^-3 . Is it p-type or n-type semiconductor?

The number densities of electrons and holes in an extrinsic semiconductor are 8 xx 10^13 cm^-3 and 5 xx 10^12cm^-3 respectively and their respective mobilities are : 23 xx 10^3cm^2//Vs and 10^2cm^2//Vs . The conductivity of the semiconductor is