The concentration of hole-electron pairs in pure silicon at T=300K is `7xx10^(15)`per cubic metre, Antimony is doped into silicon in a proportion of 1 atom in `10^7`atons. Assuming that half of the impurity atons contribute electrons in the conduction band, calculate the foctor by which the number of silicon atoms per cubic metre is `5xx10^(28)`

Explanation

To solve the problem, we need to calculate the factor by which the number of charge carriers increases in silicon after doping it with antimony. Let's break down the steps:

### Step 1: Identify Given Values
- Concentration of hole-electron pairs in pure silicon (Ni) = \(7 \times 10^{15} \, \text{m}^{-3}\)
- Proportion of antimony doped = 1 atom in \(10^7\) atoms
- Total number of silicon atoms per cubic meter (Ns) = \(5 \times 10^{28} \, \text{m}^{-3}\)
- Half of the impurity atoms contribute electrons in the conduction band.

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