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The reverse-biased current of a particul...

The reverse-biased current of a particular p-n junction diode increases when it is expoesed to light of wavelength less than or equal to 600nm.Assume that the increases in carrier concentration takes place due to the creation of new hole-electron pairs by the light.Find the band gap.

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To find the band gap of the p-n junction diode based on the information provided, we can follow these steps: ### Step 1: Understand the relationship between wavelength and energy The energy of a photon can be calculated using the formula: \[ E = \frac{hc}{\lambda} \] where: - \( E \) is the energy of the photon, - \( h \) is Planck's constant (\( 4.1357 \times 10^{-15} \) eV·s), ...
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In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. For Si diode minimum required forward voltage so that current can flow is

In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. Correct graph for variation of charge density with distance from the junction is

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