Lets `n_p`and `n_e` be the number of holes and conduction electrons in an intrinsic semiconductor.

Options

A. `n_pgtn_e`
B. `n_p=n_e`
C. `n_pltn_e`
D. `n_p!=n_e`

Answer

To solve the question regarding the relationship between the number of holes (\(n_p\)) and conduction electrons (\(n_e\)) in an intrinsic semiconductor, we can follow these steps:

### Step-by-Step Solution:

1. **Understand the Concept of Intrinsic Semiconductors**:
- An intrinsic semiconductor is a pure semiconductor material without any significant dopant atoms present. Common examples include silicon (Si) and germanium (Ge).

2. **Covalent Bonding in Semiconductors**:
- In intrinsic semiconductors, the atoms are bonded covalently. Each atom forms four bonds with neighboring atoms.

3. **Effect of Temperature**:
- At room temperature (approximately 300 K), some of these covalent bonds can break due to thermal energy.

4. **Generation of Charge Carriers**:
- When a covalent bond breaks, it results in the formation of one conduction electron and one hole. The conduction electron is free to move and contribute to electrical conductivity, while the hole represents the absence of an electron.

5. **Equal Generation of Electrons and Holes**:
- Since each broken bond produces one electron and one hole, the number of conduction electrons (\(n_e\)) generated is equal to the number of holes (\(n_p\)) created.

6. **Conclusion**:
- Therefore, in an intrinsic semiconductor, we can conclude that \(n_p = n_e\).

### Final Answer:
The correct option is **Option 2: \(n_p = n_e\)**.

---